Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC-Reference-Cited by-同舟云学术

Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC

Published:2010-04 Issue: Volume:645-648 Page:455-458
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Alfieri Giovanni¹,Kimoto Tsunenobu¹,Pensl Gerhard²

Affiliation:

1. Kyoto University

2. Friedrich-Alexander-Universität Erlangen-Nürnberg

Abstract

We report on the electrical characterization of high-purity semi-insulating 4H-SiC after annealing at temperatures between room temperature and 1700 oC by current-mode deep level transient spectroscopy (I-DLTS). I-V and Hall-effect measurements revealed that the investigated substrates possess p-type conductivity. Four deep levels were detected by I-DLTS with activation energies in the 0.15-1.29 eV range. We studied their thermal stability as well as their stability with respect to light illumination.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.645-648.455.pdf

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