Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2818050
Reference10 articles.
1. Effect of Schottky barrier height on EL2 measurement by deep‐level transient spectroscopy
2. Deep level defects in electron-irradiated 4H SiC epitaxial layers
3. Deep levels created by low energy electron irradiation in 4H-SiC
4. Midgap levels in both n- and p-type 4H–SiC epilayers investigated by deep level transient spectroscopy
5. Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide
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1. Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC;Journal of Applied Physics;2024-09-06
2. 4H-SiC Schottky barrier diodes as radiation detectors: A role of Schottky contact area;Diamond and Related Materials;2023-08
3. Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy;AIP Advances;2021-11-01
4. Epitaxial Graphene on Silicon Carbide as a Tailorable Metal–Semiconductor Interface;Wide Bandgap Semiconductors for Power Electronics;2021-10-29
5. Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy;Journal of Applied Physics;2021-09-14
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