Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition

Abstract

We have investigated dislocation image of 4H-SiC wafers projected on synchrotron X-ray topographs taken under different positions in the rocking curve of a diffraction peak. The diffraction geometry was grazing-incidence extremely asymmetric and the diffraction vectors were g = 1 1 2 8 and 112 8. The weak-beam images were demonstrated for basal-plane dislocations and threading-screw dislocations. The basal-plane dislocation images became narrower in width at the off-Bragg conditions, and they were decomposed to separate lines under the weak-beam condition. The threading-screw dislocations showed changes in their shape and contrast as the crystal set was tilted from the rocking-curve peak, and finally the characteristic images near the dislocation core were observed under the weak-beam condition. The origin of these weak-beam images is unclear, but it will offer detailed analysis of the dislocations.