Affiliation:
1. KTH Royal Institute of Technology
2. KTH, Royal Institute of Technology
3. TranSiC AB
Abstract
This work focuses on Ni ohmic contacts to the C-face (backside) of n-type 4H-SiC
substrates. Low-resistive ohmic contacts to the wafer backside are important especially for vertical
power devices. Ni contacts were deposited using E-beam evaporation and annealed at different
temperatures (700-1050 °C) in RTP to obtain optimum conditions for forming low resistive ohmic
contacts. Our results indicate that 1 min annealing at temperatures between 950 and 1000 °C
provides high quality ohmic contacts with a contact resistivity of 2.3x10-5 Ωcm2. Also our XRD
results show that different Ni silicide phases appear in this annealing temperature range.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
3 articles.
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