Influence of annealing temperature on the electrical and structural properties of palladium Schottky contacts on n-type 4H–SiC
Author:
Funder
UGC
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. High-temperature electronics - a role for wide bandgap semiconductors?
2. Semiconductor and Semimetals;Sazena,1998
3. Properties of Pt/4H-SiC Schottky diodes with interfacial layer at elevated temperatures
4. Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC
5. Effect of surface inhomogeneities on the electrical characteristics of SiC Schottky contacts
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