Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/21/9/096801/pdf
Reference22 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Enlargement Growth of Large 4H-SiC Bulk Single Crystal
3. Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs
4. Structural and Electrical Properties of Poly-3C-SiC Layer Obtained from P Ion Implanted 4H-SiC
5. Surface morphology of 6H-SiC after thermal diffusion
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Defects and electrical properties in Al-implanted 4H-SiC after activation annealing*;Chinese Physics B;2019-10-01
2. Formation of Ohmic contacts on laser irradiated n-type 6H-SiC without thermal annealing;Current Applied Physics;2019-04
3. Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C—SiC;Chinese Physics B;2014-05-30
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