Status and Trends in Epitaxy and Defects-Reference-Cited by-同舟云学术

Status and Trends in Epitaxy and Defects

Published:2018-06 Issue: Volume:924 Page:67-71
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Osawa Hiroshi¹,Mabuchi Y.¹,Nishihara Yoshitaka¹,Guo L.¹,Ishibashi N.¹,Fukada K.¹,Kamei Koji²,Momose Kenji¹

Affiliation:

1. Showa Denko K.K.

2. Business Development Center

Abstract

SiC-powered devices which reduce the power loss, size, and weight of power converters are gradually appearing in the power electronics market. From now on, cost reduction and quality improvement of SiC epitaxial wafers is required to further increase their popularity. This paper describes the state of development of mass production of the epi-wafer at Showa Denko K. K.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.924.67.pdf

Reference5 articles.

1. T. Masuda, A. Miyasaka, J. Norimatsu, Y. Tajima, D. Muto, K. Momose, and H. Osawa, Mater. Sci. Forum 858 (2016) 201.

2. Y. Mabuchi, T. Masuda, D. Muto, K. Momose, and H. Osawa, Mater. Sci. Forum 897 (2017) 75.

3. L. Guo, K. Kamei, K. Momose, and H. Osawa, Mater. Sci. Forum 897 (2017) 39.

4. N. Ishibashi, K. Fukada, A. Bandoh, K. Momose, and H. Osawa, Mater. Sci. Forum 897 (2017) 55.

5. K. Fukada, N. Ishibashi, Y. Miyasaka, A. Bandoh, K. Momose, and H. Osawa, Mater. Sci. Forum 897 (2017) 83.

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