Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality

Abstract

For the popularization of SiC power device, improvement on both productivity and quality of 150 mm diameter SiC epitaxial wafer is inevitable. With highly productive 8x150-mm CVD reactor, we have grown epitaxial layer on 4° off 4H-SiC wafer Si-and C-face. Modifying some reactor parts and optimizing growth conditions enabled us to achieve a good balance between high uniformity and smooth surface.