On the Development of 1700V SiC JBS Diodes in a 6-Inch Foundry-Reference-Cited by-同舟云学术

On the Development of 1700V SiC JBS Diodes in a 6-Inch Foundry

Published:2019-07 Issue: Volume:963 Page:558-561
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Yun Nick¹,Liu Eric¹,Sung Woong Je¹,Larrea Anne Sophie²,Franca Daniel²,Gorczyca Thomas²,Bialy Alexander²,Collison Wen Li²,Prudhomme Jamie²,Hung Pui Yee²,Valente Sean²,Dunn Shannon²,Sapp Brian²,Hedrick Jeffrey²

Affiliation:

1. State University of New York

2. New York Power Electronics Manufacturing Consortium

Abstract

This paper presents the development of 1700V-rated 4H-SiC JBS diodes in the state-of-the-art 6-inch SiC-dedicated foundry, NY-PEMC (New York- Power Electronics Manufacturing Consortium). The critical considerations in developing the SiC JBS diode including the cell optimization, edge termination design, process flow, and unit process developments are discussed in this paper. Static device performances such as forward conduction and reverse blocking behaviors of fabricated 1700V, 20A-rated JBS diode are presented.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.963.558.pdf

Reference6 articles.

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