Abstract
Based on finite elements method, thermal simulations were conducted to reproduce a laser annealing of several common metals deposited on 4H-SiC. We estimated the temperature reached at the metal/4H-SiC interface to check the possibility to achieve ohmic contact formation through laser annealing. An optimization of Al/Ti/4H-SiC stacking was also considered. Simulations highlighted the low temperature of the non-irradiated SiC face that allows using grinded wafer.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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