Electrical, morphological and structural properties of Ti ohmic contacts formed on n-type 4H–SiC by laser thermal annealing

Author:

Berger ClémentORCID,Alquier Daniel,Bah Micka,Michaud Jean-François

Funder

Electronic Components and Systems for European Leadership

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. Fundamentals of Silicon Carbide Technology: Growth, Characterizaton, Devices and Applications;Kimoto,2014

2. Application of p-type NiO deposited by magnetron reactive sputtering on GaN vertical diodes;Wang;Mater. Sci. Semicond. Process.,2021

3. Au/p-diamond ohmic contacts deposited by RF sputtering;Zhen;Appl. Surf. Sci.,2008

4. Schottky-ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem?;La Via;Microelectron. Eng.,2003

5. Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC;Vivona;Appl. Surf. Sci.,2017

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