Abstract
Ultrahigh-voltage SiC PiN diodes with an original junction termination extension (JTE) structure and improved forward characteristics are presented. A space-modulated JTE (SM-JTE) structure was designed by device simulation, and a high breakdown voltage of 26.9 kV was achieved by using a 270 μm-thick epilayer and 1050 μm-long JTE. In addition, lifetime enhancement process via thermal oxidation was performed to improve the forward characteristics. The on-resistance of the SiC PiN diodes was remarkably reduced by lifetime enhancement process. The temperature dependence of the on-resistance was also discussed.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. S. Sundaresan, C. Sturdevant, M. Marripelly, E. Lieser, and R. Singh, Mater. Sci. Forum, 717-720 (2012) 949.
2. L. Cheng, A. K. Agarwal, C. Capell, M. O'Loughlin, C. Jonas, J. Richmond, A. Burk, J. Palmour, A. A. Ogunniyi, H. K. O'Brien, and C. J. Scozzie, Mater. Sci. Forum, 740-742 (2013) 978.
3. Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour, and T. Hayashi, Proc. Int. Symp. Power Semiconductor Devices and ICs, 2001, p.27.
4. D. C. Sheridan, G. Niu, and J. D. Cressler, Solid-State Electron., 45 (2001) 1659.
5. J. B. Fedison, N. Ramungul, T. P. Chow, M. Ghezzo, and J. W. Kretchmer, IEEE Electron Device Lett., 22 (2001) 130.
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