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Design of single and multiple zone junction termination extension structures for SiC power devices

  • Published:2001-09 Issue:9 Volume:45 Page:1659-1664
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Sheridan David C.,Niu Guofu,Cressler John D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Calculation of the diffusion curvature related avalanche breakdown in high voltage planar p–n junctions;Temple;IEEE Trans,1975

2. Baliga BJ. Power Semiconductor Devices. Boston: PWS Publishing Co., 1995

3. MEDICI 2-D semiconductor device simulator, ver. 4.3, Avant! Corp., Palo Alto, CA, 1999

4. Junction termination extension for near-ideal breakdown voltage in p–n junctions;Temple;IEEE Trans Electron Dev,1986

5. High temperature implant activation in 4H and 6H-SiC in a silane ambient to reduce step bunching;Saddow;Mater Sci Forum,2000

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