13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications
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Published:2014-02
Issue:
Volume:778-780
Page:855-858
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Okamoto Dai1, Tanaka Yasunori1, Mizushima Tomonori1, Yoshikawa Mitsuru1, Fujisawa Hiroyuki1, Takenaka Kensuke1, Harada Shinsuke1, Ogata Shuji2, Hayashi Toshihiko2, Izumi Toru2, Hemmi Tetsuro2, Tanaka Atsushi2, Nakayama Koji2, Asano Katsunori2, Matsumoto Kazushi1, Ohse Naoyuki1, Ryo Mina1, Ota Chiharu3, Takao Kazuto3, Mizukami Makoto3, Kato Tomohisa1, Takei Manabu1, Yonezawa Yoshiyuki1, Fukuda Kenji1, Okumura Hajime1
Affiliation:
1. National Institute of Advanced Industrial Science and Technology (AIST) 2. Kansai Electric Power Co., Inc. 3. Toshiba Corporation
Abstract
We successfully fabricated 13-kV, 20-A, 8 mm × 8 mm, drift-free 4H-SiC PiN diodes. The fabricated diodes exhibited breakdown voltages that exceeded 13 kV, a forward voltage drop of 4.9–5.3 V, and an on-resistance (RonAactive) of 12 mW·cm2. The blocking yield at 10 kV on a 3-in wafer exceeded 90%. We investigated failed devices using Candela defect maps and light-emission images and found that a few devices failed because of large defects on the chip. We also demonstrated that the fabricated diodes can be used in conducting high-voltage and high-current switching tests.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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