Smart Power Devices Nanotechnology-Reference-Cited by-同舟云学术

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Smart Power Devices Nanotechnology

Published:2017-04-07 Issue: Volume: Page:163-204
ISSN:
Container-title:Nanoelectronics
language:
Short-container-title:

Author:

Meneghesso Gaudenzio¹,Moens Peter²,Östling Mikael³,Sonsky Jan⁴,Stoffels Steve⁵

Affiliation:

1. University of Padova; Department of Information Engineering; Via Gradenigo 6/B 35131 Padova Italy

2. ON Semiconductor; Power Technology Centre, Corporate R&D; Westerring 15 9700 Oudenaarde Belgium

3. KTH, Royal Institute of Technology, School of Information and Communication Technology; E229 SE-164 40 Kista Sweden

4. NXP Semiconductors; Technology & Operations; Interleuvenlaan 74-80 3001 Leuven Belgium

5. imec; Kapeldreef 75 3001 Leuven Belgium

Publisher

Wiley-VCH Verlag GmbH & Co. KGaA

Reference68 articles.

1. Ludikhuize , A.W. 2000 The 12th International Symposium on Power Semiconductor Devices and ICs 11 18

2. Cogan , A.I. Thornton , N.R. 1990

3. A review of superjunction vertical diffused MOSFET;Chen;IETE Tech. Rev.,2012

4. Fundamentals of Power Semiconductor Devices

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1. Speech and music separation approaches - a survey;Multimedia Tools and Applications;2022-03-14

2. A time-dependent Verilog-A compact model for MOS capacitors with interface traps;Japanese Journal of Applied Physics;2019-02-25

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