Abstract
Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of Cree’s Z-FET™ product. This paper discusses the key reliability results from Time-Dependent-Dielectric-Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements that indicate that the SiC MOSFETs can demonstrate excellent lifetime and stable operation in the field.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference6 articles.
1. M. Maranowski and J.A. Cooper, Jr., Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC, IEEE Trans on Electron Devices, 46 (1999) 520-524.
2. H. -F. Li, S. Dimitrijev, and H.B. Harrison, Improved reliability of NO-nitrided SiO2 Grown on p-type 4H-SiC, IEEE Electron Device Letters, 19 (1998) 279-281.
3. B. Yeates, IEEE Trans. Electron Devices, 45 (1998) 939.
4. Information on http: /www. jedec. org/sites/default/files/docs/JESD92. pdf.
5. Dr. John S. Suehle, NIST, private communication.
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