Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates
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Published:2012-05
Issue:
Volume:717-720
Page:137-140
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Zhang Jie1, Chung Gil Yong1, Sanchez Edward K.1, Loboda Mark J.1, Sundaresan Siddarth G.2, Singh Ranbir2
Affiliation:
1. Dow Corning Compound Semiconductor Solutions 2. GeneSiC Semiconductor Incorporation
Abstract
This paper reports the progress of the thick epitaxy development at Dow Corning. Epiwafers with thickness of 50 – 100 m have been grown on 4° off-axis 76mm 4H SiC substrates. Smooth surface with RMS roughness below 1nm and defect density down to 2 cm-2 are achieved for 80 - 100 m thick epiwafers. Long carrier lifetime of 2 – 4 s are routinely obtained, and low BPD density in the range of 50 down to below 10 cm-2 is confirmed. High voltage JBS diodes have been successfully fabricated on these wafers with thick epitaxial layers.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference10 articles.
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