4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer-Reference-Cited by-同舟云学术

4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer

Published:2011-03 Issue: Volume:679-680 Page:123-126
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Chung Gil Yong¹,Loboda Mark J.¹,Zhang Jie¹,Wan Jian Wei¹,Carlson E.P.¹,Toth T.J.¹,Stahlbush Robert E.²,Skowronski Marek³,Berechman R.³,Sundaresan Siddarth G.⁴,Singh Ranbir⁴

Affiliation:

1. Dow Corning Compound Semiconductor Solutions

2. U.S. Naval Research Laboratory

3. Carnegie Mellon University

4. GeneSiC Semiconductor Incorporation

Abstract

Improvements in the quality and consistency of 4H-SiC epitaxy wafers are now starting to enable growth of commercial SiC power device applications in areas such as inverters for photo-voltaic systems and power supplies. Recent work has achieved very low epitaxy surface roughness and very low BPD (Basal plane dislocation) in the on 4 degree off-axis substrates. In this paper, we report characterization of the very low BPD epitaxy wafers and a newly observed triangular defect.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.679-680.123.pdf

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