Applications of SiC-Transistors in Photovoltaic Inverters
-
Published:2009-03
Issue:
Volume:615-617
Page:895-898
-
ISSN:1662-9752
-
Container-title:Materials Science Forum
-
language:
-
Short-container-title:MSF
Author:
Kranzer Dirk1,
Burger Bruno1,
Navarro Nicolas1,
Stalter Olivier1
Affiliation:
1. Fraunhofer Institute for Solar Energy Systems (ISE)
Abstract
Currently there are several silicon carbide (SiC) field effect or bipolar transistor types in development with normally-on and normally-off characteristics. It is not yet clear, which transistor type will prevail in the market and which will remain a niche product. This is not only determined by their electrical characteristics, but also by their acceptance by engineers. In this paper the implementation and the performance of 1200 V / 20 A / 100 m SiC-DMOSFETS and 1200 V / 12 A / 125 m normally-off SiC-JFETs in photovoltaic inverters (PV-inverters) is shown.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献