VPD-DC-TXRF for Metallic Contamination Analysis of Ge Wafers-Reference-Cited by-同舟云学术

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VPD-DC-TXRF for Metallic Contamination Analysis of Ge Wafers

Published:2005-04 Issue: Volume:103-104 Page:213-216
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Hellin David¹,Geens V.,Teerlinck I.²,Van Steenbergen Jan³,Rip Jens¹,Laureyn W.,Raskin G.,Mertens Paul W.¹,De Gendt Stefan²,Vinckier Chris⁴

Affiliation:

1. IMEC Interuniversity Microelectronics Center

2. IMEC

3. IMEC VZW

4. Katholieke Universiteit Leuven

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.103-104.213.pdf

Reference50 articles.

1. C.O. Chui, S. Ramanathan, B.B. Triplett, P.C. McIntyre and K.C. Saraswat, Germanium MOS Capacitors Incorporating Ultrathin High-k Gate Dielectric, IEEE Electron Device Letters 23 (8) (2002) 473-475.

2. See: The International Technology Roadmap for Semiconductors, Semiconductor Industry Association.

3. D. Hellin, T. Bearda, C. Zhao, G. Raskin, P.W. Mertens, S. De Gendt, M.M. Heyns and C. Vinckier, Spectrochim. Acta 58B (2003) 2093-2104.

4. S. Pahlke, L. Fabry, L. Kotz, C. Mantler and T. Ehmann, Spectrochim. Acta 56B (2001) 2261-2274.

5. D. Hellin, J. Rip, S. Arnauts, S. De Gendt, P.W. Mertens and C. Vinckier, Validation of VPD-DC-TXRF Spectrometry for Metallic Contamination Analysis of Silicon Wafers, in press for Spectrochim. Acta B.

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