Monte Carlo Simulation of Projection Electron Beam Lithography

Abstract

We have calculated angular and energy loss distributions of electrons transmitted through masks for electron projection lithography by using a Monte Carlo simulation method. The angular and energy loss distributions are much wider in the mask stack than those in the membrane layer. The large non-scattering and non-energy-loss probabilities are also found for the membrane layer. High contrast image can thus be achieved within a small size of aperture.