Wet Etching Behavior of Poly-Si in TMAH Solution-Reference-Cited by-同舟云学术

Wet Etching Behavior of Poly-Si in TMAH Solution

Published:2012-12 Issue: Volume:195 Page:42-45
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Takahashi Hiroaki¹,Otsuji Masayuki¹,Snow Jim¹,Sebaai Farid²,Arai Kenichiro¹,Sato Masanobu¹,Nadahara Soichi¹

Affiliation:

1. Dainippon Screen MFG., Corporation, Limited

2. IMEC Interuniversity Microelectronics Center

Abstract

Since Tetramethylammonium Hydroxide (TMAH) became widely used as a silicon etchant, e.g. the dummy gate removal for gate-last approach (RMG) [1, or Si fin formation on FinFET [, some careful preparations and optimizations have required implementation. These adaptations have involved not only chemical-related issues, but also hardware-related in order to satisfy the necessary process performance.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.195.42.pdf

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