1207cm-1 Infrared Absorption Band in Carbon-Rich Silicon Crystal

Author:

Chen Lin1,Yu Xue Gong1,Chen Peng2,Gu Xin1,Lu Jing Gang3,Yang De Ren1

Affiliation:

1. Zhejiang University

2. Chongqing University

3. Suntech Power Co.,

Abstract

Silicon wafers with different carbon contents have been characterized by Fourier transform infrared spectroscopy technique. An infrared absorption band at 1207cm-1 can be newly observed in the case of carbon content being above 1.7×1017/cm3, whose intensity increases with an increase of carbon concentration in silicon crystal. More interestingly, the 1207cm-1 band cannot be influenced by the long-time annealing in the temperature range of 450-1250oC, suggesting the high thermal stability of this carbon-related defect, which might be related to the presence of silicon carbide in silicon crystals.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

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