Affiliation:
1. Cheonnam National University
2. Chonnam National University
Abstract
Inductively coupled plasma reactive ion etching of Ge doped silica glasses and SiON was
investigated, using C2F6- and NF3-based gas mixtures. Mesas with smooth surfaces and vertical
sidewalls were obtained, with a maximum etch rate of about 310nm/min in the case of C2F6 RIE of
Ge-SiO2 and 280 nm/min in the case of SiON. The NF3 plasma yielded slightly higher etch rate,
although sloped sidewalls were obtained. Results of the X-ray photoelectron spectroscopy showed
little contamination on the etched surfaces.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
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