Critical Thickness Threshold in HfO<sub>2</sub> Layers-Reference-Cited by-同舟云学术

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Critical Thickness Threshold in HfO₂ Layers

Published:2007-11 Issue: Volume:134 Page:67-70
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Besson Pascal¹,Loup Virginie²,Salvetat Thierry³,Rochat Névine⁴,Lhostis Sandrine⁵,Favier Sylvie⁵,Dabertrand Karen⁵,Cosnier Vincent⁵

Affiliation:

1. ST Microelectronics Crolles2

2. CEA - LETI

3. CEA/DRT-LETI

4. LETI-CEA Grenoble (Technologies Avancées)

5. STMicroelectronics

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.134.67.pdf

Reference25 articles.

1. Karen Dabertrand, et al, EMRS-2006, Symposium.

2. Shinji Fujii, et al, Applied Physics Letters 86 (2005).

3. F. Tardif, et al, UCPSS, Belgium (1996), p.175.

4. S. Petitdidier, et al, UCPSS, (2002).

5. N. Rochat, et al. Physica Status Solidi (c), 1 (2003).

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1. Cleaning Challenges of High-κ/Metal Gate Structures;Handbook of Cleaning in Semiconductor Manufacturing;2011-02-22

2. (Invited) Electrical Characterization of Ge-pFETs with HfO2/TiN Metal Gate: Review of Possible Defects Impacting the Hole Mobility;ECS Transactions;2010-04-16

3. Interface Study of SiO2/ HfO2/SiO2 Stacks Used as InterPoly Dielectric for Future Generations of Embedded Flash Memories;MRS Proceedings;2010

4. Chemical and Structural Properties of a TaN/HfO[sub 2] Gate Stack Processed Using Atomic Vapor Deposition;Journal of The Electrochemical Society;2009

5. Interface Study in a "Metal / High-k" Gate Stack: Tantalum Nitride on Hafnium Oxide;ECS Transactions;2008-10-03

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