Author:
Guiraud Alexandre,Breil Nicolas,Gros-Jean Mickaël,Deleruyelle Damien,Micolau Gilles,Muller Christophe,Cherault Nathalie,Morin Pierre
Abstract
AbstractWe have investigated the integration of Hf-based material as Inter Poly Dielectric in flash memories devices. Electrical measurements showed the good properties of SiO2/HfO2/SiO2 stacks. We then interested to the impact of the thermal budget on this specific stack which induces changes in the electrical properties. XPS measurements suggests those changes are due to the presence of an Hf-silicate layer at the SiO2/HfO2 interface.
Publisher
Springer Science and Business Media LLC