Defectivity Reduction in the Silicon Tough Polishing with Polyamine and Nonions Surfactant Additives

Abstract

The effects of the polyamine chelating agent and nonions surfactant additive on the surface defectivity reduction in the final polishing of the mono silicon wafers were investigated using high-purity nano colloidal silica based organic alkaline slurry. Experimental results reveal that the chemical enhanced silicon final polishing slurry containing FA/O polyamine chelating agent and FA/O nonions surfactant changed the chemistry character of silicon surface, can realize the chemical uniform etch the surface areas with defects and defect-free area, deeply lower the surface microroughness of silicon polished wafer, achieving defect-free with perfect quality of flat mirror-surface.