Effect of Dispersant Addition during Ceria Abrasive Milling Process on Light Point Defect (LPD) Formation after Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Evaluation of chemical mechanical planarization slurry dispersion using a combined scanning mobility particle sizer-optical particle sizer system;Aerosol Science and Technology;2023-07-20
2. Defectivity Reduction in the Silicon Tough Polishing with Polyamine and Nonions Surfactant Additives;Advanced Materials Research;2011-11-22
3. Effects of Calcination and Milling Process Conditions for Ceria Slurry on Shallow-Trench-Isolation Chemical–Mechanical Polishing Performance;Japanese Journal of Applied Physics;2007-12-06
4. Dependence of Non-Prestonian Behavior of Ceria Slurry with Anionic Surfactant on Abrasive Concentration and Size in Shallow Trench Isolation Chemical Mechanical Polishing;Japanese Journal of Applied Physics;2006-05-09
5. Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing;Japanese Journal of Applied Physics;2005-11-09
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