Static Performance of SiGe HBTs at Low Temperature-Reference-Cited by-同舟云学术

Static Performance of SiGe HBTs at Low Temperature

Published:2014-10 Issue: Volume:666 Page:59-63
ISSN:1662-7482
Container-title:Applied Mechanics and Materials
language:
Short-container-title:AMM

Author:

Lakhdara Maya¹,Latreche Saϊda¹,Gontrand Christian²

Affiliation:

1. Université

2. INSA de Lyon

Abstract

—This paper analyse is the impact of cryogenic temperatures for SiGe Heterojunction Bipolar Transistors (HBTs) base, realised in BiCMOS9 0.13μm industrial process. The use of these components in microwaves applications exposed to various temperatures is fundamental aspect to predict in precise way its electric characteristics. This paper investigates the temperature dependence from (170 K to 300 K) of DC, for NPN SiGe heterojunction bipolar transistors (HBTs) and notably modeling high performance Si/SiGe HBT for telecommunication and radar detection (>0.5THz) in low temperature (cryogenic temperature).

Publisher

Trans Tech Publications, Ltd.

Link

https://www.scientific.net/AMM.666.59.pdf

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