High Sensitive Nanocrystal Titanium Nitride EG-FET pH Sensor-Reference-Cited by-同舟云学术

High Sensitive Nanocrystal Titanium Nitride EG-FET pH Sensor

Published:2013-09 Issue: Volume:802 Page:232-236
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Rayanasukha Yossawat¹,Porntheeraphat Supanit²,Bunjongpru Win¹,Khemasiri Narathon¹,Pankiew Apirak¹,Jeamsaksiri Wutthinan³,Srisuwan Awirut³,Chaisriratanakul Woraphan³,Hruanun Charndet⁴,Poyai Amporn⁵,Nukeaw Jiti⁶

Affiliation:

1. King Mongkut’s Institute of Technology Ladkrabang

2. NSDTA

3. NECTEC, NSTDA

4. Amporn Poyai Thai Microelectronic Center (TMEC) Bangkok

5. Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency (NSTDA)

6. King Mongkut's Institute of Technology Ladkrabang

Abstract

Solid state pH-sensor device with high efficiency has successfully prepared by using TiN thin film as sensing membrane of extended gate field effect transistor (EG-FET) device. This research has described the physical properties and sensing characteristics of TiN membrane thin film which deposited on SiO2/Si substrate through reactive D.C. magnetron sputtering system. Thenanocrytal-TiNwith anatasestructure depended on substrate heating conditions was revealed from glancing angle x-ray diffraction. The IDS-VGS measurement in the standard buffer solutions showed that the sensitivity of fabricated TiN-EGFET pH deviceis 59.82mV/pH.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.802.232.pdf

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