A NOVEL pH SENSITIVITY OF SnO2 THIN FILM BASED EGFET PREPARED USING CHEMICAL BATH METHOD

Abstract

Nanocrystalline (NC) tin dioxide (SnO2) thin film has been prepared using chemical bath method at low working temperature onto SiO2/Si substrates. The structural and morphological properties were studied through X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The as-deposited thin film appeared with tetragonal rutile structure. The crystallization of SnO2 film was achieved when the film was exposed to anneal at [Formula: see text]C. NC SnO2 thin film was successfully utilized as an extended gate field-effect transistor (EGFET) pH sensing. NC SnO2 film based pH-EGFET sensor displayed a notable pH sensing performance, where the sensitivity and the linearity values are equal to 25.7 (mV/pH) and 0.8489 within 2–12 range consecutive. The NC SnO2 thin film sensor has shown good pH sensor stability and reliability; thus it can be considered the best choice for flexible and disposable biosensors.