Affiliation:
1. Dalian Maritime University
2. Henan University of Technology
3. Tibet University for International
Abstract
Aluminum nitride thin film has been deposited on transparent SiAlON substrate by reactive magnetron sputtering. X-ray photoelectron spectroscopy patterns and raman spectra were used to analysis the phase composition of the thin film, and the surface morphology of the thin film was observed by atomic force microscope, which reveal that AlN thin film with smooth surface and columniform microstructure was formed. The fourier transform infrared spectral of the SiAlON substrate and SiAlON/AlN composition structure indicate that the AlN thin film has high transmittance above 99%, it is to say that the AlN thin film is transparent, and it nearly have no affect on the infrared transmittance of the SiAlON substrate.
Publisher
Trans Tech Publications, Ltd.