The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon-Reference-Cited by-同舟云学术

The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon

Published:2013-10 Issue: Volume:205-206 Page:181-190
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Markevich Vladimir P.¹,Peaker Anthony R.¹,Hamilton Bruce¹,Lastovskii S.B.²,Murin Leonid I.²,Coutinho Jose³,Rayson Mark J.⁴,Briddon Patrick R.⁵,Svensson Bengt Gunnar⁶

Affiliation:

1. University of Manchester

2. Academy of Sciences of Belarus

3. University of Aveiro

4. Lulea University of Technology

5. Newcastle University

6. University of Oslo

Abstract

The data obtained recently from combined deep-level-transient spectroscopy (DLTS), local vibrational mode (LVM) spectroscopy and ab-initio modeling studies on structure, electronic properties, local vibrational modes, reconfiguration and diffusion paths and barriers for trivacancy (V3) and trivacancy-oxygen (V3O) defects in silicon are summarized. New experimental results on the introduction rates of the divacancy (V2) and trivacancy upon 4 MeV electron irradiation and on the transformation of V3 from the fourfold coordinated configuration to the (110) planar one upon minority carrier injection are reported. Possible mechanisms of the transformation are considered and discussed.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.205-206.181.pdf

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