Affiliation:
1. The University of Manchester
2. Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus
Abstract
The isotopic content of natural silicon (28Si (92.23 %), 29Si (4.68 %) и 30Si (3.09 %)) affects noticeably the shape of IR absorption bands related to the oxygen impurity atoms. In the present work an attempt is undertaken to determine the positions of local vibrational modes (LVMs), related to quasimolecules 28Si16OS29Si and 28Si16OS30Si (OS – substitutional oxygen atom), for the absorption spectra measured at room temperature. An estimation of the isotopic shifts of corresponding modes is done by fitting the shape of the experimentally measured absorption band related to the vacancy–oxygen center in irradiated Si crystals. The LVM isotope shifts are found to be equal 2,2 ± 0.25 cm–1 for 28Si-16OS29Si and 4,3 ± 0,9 см–1 for 28Si-16OS30Si in relation to the basic band due to 28Si-16OS28Si, and the full width at half maximum of the A-center absorption band (28Si-16OS28Si) is 5,3 ± 0.25 cm–1. By means of infrared absorption spectroscopy a clear correlation between the disappearance of the divacancy (V2) in the temperature range 200–275 ºС and appearance of two absorption bands with their maxima at 825.8 and 839.2 cm–1 in irradiated oxygen-rich Si crystals is found. The band positioned at 825.8 cm–1 is assigned to a divacancy-oxygen defect V2O formed via an interaction of mobile V2 with interstitial oxygen (Oi ) atoms. The 839.2 cm–1 band is much more pronounced in neutron irradiated samples as compared to samples irradiated with electrons. We argue that it is related to a trivacancy–oxygen defect (V3O) formed via an interaction of mobile V3 with Oi atoms.
Publisher
Publishing House Belorusskaya Nauka
Subject
Computational Theory and Mathematics,General Physics and Astronomy,General Mathematics
Reference10 articles.
1. Chroneos A., Sgourou E. N., Londos C. A., Schwingenschlögl U. Oxygen defect processes in silicon and silicon germanium. Applied Physics Reviews, 2015, vol. 2, pp. 021306 (1–15). https://doi.org/10.1063/1.4922251
2. Lindström J. L., Murin L. I., Hallberg T., Markevich V. P., Svensson B. G., Kleverman M., Hermansson J. Defect engineering in Czochralski silicon by electron irradiation at different temperatures. Nuclear Instruments and Methods in Physics Research B, 2002, vol. 186, no. 1–4, pp. 121–125. https://doi.org/10.1016/s0168-583x(01)00871-0
3. Pajot B., Clerjaud B. Optical Absorption of Impurities and Defects in Semiconducting Crystal: Electronic Absorption of Deep Centres and Vibrational Spectra. Berlin, Heidelberg, Springer, 2013. 463 p.
4. Murin L. I., Lindstrom J. L., Markevich V. P., Misiuk A., Londos C. A. Thermal double donor annihilation and oxygen precipitation at around 650 °C in Czochralski-grown Si: local vibrational mode studies. Journal of Physics: Condensed Matter, 2005, vol. 17, no. 22, pp. S2237–S2246. https://doi.org/10.1088/0953-8984/17/22/011
5. Korshunov F. P., Bogatyrev Yu. V. Radiation technology for manufacturing powerful semiconductor devices. Vestsi Natsyyanal’nai akademii navuk Belarusi. Seryya fizika-technichnych navuk = Proceedings of the National Academy of Sciences of Belarus. Physical-technical series, 2008, no. 4, pp. 106–114 (in Russian).
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