Abstract
Incorporating substrates with higher charge mobilities than Si and Ge in metal-oxide-semiconductor field-effect transistors (MOSFETs) would extend the scaling of this device architecture. III-V semiconductors are candidates, and etching and passivation processes are needed that are selective and yield smooth surfaces. The (100) face of III-V compounds contains both electron-deficient group III (Ga, In) atoms and electron-rich group V (P, As, Sb) atoms. Etching InP(100) in a mixture of HCl and H2O2 chlorinates the In (group III) atom forming a soluble product [1,2], yet the P (group V) atom is more reactive and is depleted from the surface [3]. α-Hydroxy acids (lactic, citric, malic, and tartaric) have been shown to bind to the group III atom [3] and could promote more uniform etching. This paper compares the surface chemistry of GaAs and InAs after etching in HCl and H2O2 mixtures with and without tartaric acid.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Cited by
7 articles.
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