Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)-Reference-Cited by-同舟云学术

Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)

Published:2020-07 Issue: Volume:1004 Page:290-298
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Sonneville Camille¹,Planson Dominique²,Phung Luong Viet²,Bevilacqua Pascal¹,Asllani Besar¹

Affiliation:

1. Université Claude Bernard Lyon 1

2. Université de Lyon

Abstract

In this paper we present a new test bench called micro-OBIC used to characterized wide band gap semi-conductor. Micro-OBIC allows to get an Optical Beam Induced Current (OBIC) signal with a microscopic spatial resolution. We used micro-OBIC to characterize peripheral protection such as MESA, JTE or JTE in high voltage SiC device.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.1004.290.pdf

Reference11 articles.

1. T. Kimoto and J.A. Cooper, Fundamentals of Silicon Carbide Technology, Wiley, Sing., (2014).

2. R. Stengl, High-voltage planar junctions investigated by the OBIC method, IEEE Transactions on electron devices, 34 (1987) 911-919.

3. H. Hamad, D. Planson, C. Raynaud, P. Bevilacqua, OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K, Semicond. Sci. Technol. 32 (2017) 054001.

4. C. Raynaud, D. Nguyen, N. Dheilly, D. Tournier, P. Brosselard, M. Lazar and D. Planson, Optical beam induced current measurements: principles and applications to SiC device characterization. phys. stat. sol. (a), 206 (2009) 2273-2283.

5. D Planson, B Asllani, LV Phung, P Bevilacqua, H Hamad, C Raynaud, Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors, Materials Science in Semiconductor Processing, 94 (2019) 116-127.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Visualization of P<sup>+</sup> JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique;Solid State Phenomena;2024-08-23

2. Advanced characterization of SiC devices by optical beam induced current (OBIC): Experimental and simulation results;Materials Science in Semiconductor Processing;2024-08

3. Emerging trends in OBIC characterization technique for Wide Bandgap semiconductor devices;2023 International Semiconductor Conference (CAS);2023-10-11

4. 4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method;Materials Science Forum;2022-05-31