Affiliation:
1. Purdue University
2. The Ohio State University
3. Sonrisa Research, Inc.
Abstract
Silicon Carbide (SiC) power MOSFETs have made great progress since the first commercial devices were introduced in 2011, but they are still far from theoretical limits of performance. Above ~1200 V the specific on-resistance is limited by the drift region, but below 1200 V the resistance is dominated by the channel and the substrate, with smaller contributions from the source and the JFET regions. Trench MOSFETs generally have smaller cell area than planar DMOSFETs and are inherently more scalable. In this paper, we describe a highly self-aligned fabrication process to realize deeply-scaled trench MOSFETs with a cell pitch of 0.5 μm per channel. Since the narrow gate trench is shaped like a letter “I”, we refer to these devices as “IMOSFETs.”
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference10 articles.
1. K. Hamada, et al., SiC - Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles,, IEEE Trans. Electron Dev., 62, p.278 (2015).
2. J. Tan, et al., High-voltage accumulation-layer UMOSFET's in 4H-SiC,, IEEE Elec. Dev. Lett., 19, 487 (1998).
3. Y. Nakano, et al., Ultra low Ron SiC Trench Devices,, ICSCRM 2011, pg 147
4. Mat. Sci. Forum, 717-720, 1069 (2012).
5. D. Peters et al., The New CoolSiC™ Trench MOSFET Technology for Low Gate Oxide Stress and High Performance,, PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, pp.1-7 (2017).
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献