Nickel Gettering in Silicon: Role of Oxygen

Author:

Regula G.1,El Bouayadi R.1,Pichaud Bernard2,Ntsoenzok E.3

Affiliation:

1. Université III d'Aix-Marseille

2. Aix Marseille Université

3. Centre National de la Recherche Scientifique

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Physical Chemistry of Semiconductor Materials Processing;Physical Chemistry of Semiconductor Materials and Processes;2015-08-07

2. Influence of metal trapping on the shape of cavities induced by high energy He+ implantation;Journal of Applied Physics;2006-02-15

3. Test Methods for Measuring Bulk Copper and Nickel in Heavily Doped p-Type Silicon Wafers;Journal of The Electrochemical Society;2006

4. Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials;Journal of Analytical Atomic Spectrometry;2002-11-25

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