ODMR and Electron Spin Echo Studies on the Non-Radiative Triplet State of the (V-O)° Defect in Silicon-Reference-Cited by-同舟云学术

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ODMR and Electron Spin Echo Studies on the Non-Radiative Triplet State of the (V-O)° Defect in Silicon

Published:1992-01 Issue: Volume:83-87 Page:357-362
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Frens A.M.,Schmidt J.¹,Chen W.M.²,Monemar Bo²

Affiliation:

1. Leiden University

2. Linköping University

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.83-87.357.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical studies of ion-implantation centres in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-01

2. Metastable triplet state of the vacancy-oxygen center in silicon: Anab nitiocluster study;Physical Review B;1994-08-15

3. Observation of rapid direct charge transfer between deep defects in silicon;Physical Review Letters;1994-05-02

4. Transient characteristics of isoelectronic bound excitons at hole-attractive defects in silicon: The C(0.79 eV), P(0.767 eV), and H(0.926 eV) lines;Physical Review B;1993-11-15

5. Silicon, paramagnetic centers: principal values of g-tensors of orthorhombic-I centers;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements

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