Transient characteristics of isoelectronic bound excitons at hole-attractive defects in silicon: The C(0.79 eV), P(0.767 eV), and H(0.926 eV) lines
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.14973/fulltext
Reference29 articles.
1. Isoelectronic Donors and Acceptors
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