Optical studies of ion-implantation centres in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. For a recent review see K.S. Jones, in: EMIS Data Reviews Series, Properties of Silicon, 1999, p. 755
2. Transition from small interstitial clusters to extended {311} defects in ion-implanted Si
3. Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed n-type silicon
4. An efficient room-temperature silicon-based light-emitting diode
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