Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed n-type silicon-Reference-Cited by-同舟云学术

Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed n-type silicon

Published:2000-09 Issue:5 Volume:88 Page:2309-2317
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Schmidt D. C.,Svensson B. G.,Seibt M.,Jagadish C.,Davies G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1288020

Reference27 articles.

1. Residual defects in Cz-silicon after low dose self-implantation and annealing from 400°C to 800°C

2. Negative differential resistance in proton-beam modified silicon

3. Study on the evolution and nature of interstitial-type defects following proton and alpha particle implantation during low-dose proximity gettering of platinum

4. Deep defect levels and mechanical strain in Ge+-implanted silicon

5. Mechanical strain and electrically active defects in Si implanted with Ge+ions

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