Si-based light emitters synthesized with Ge+ ion bombardment-Reference-Cited by-同舟云学术

Si-based light emitters synthesized with Ge+ ion bombardment

Published:2021-10-21 Issue:15 Volume:130 Page:153101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zinovyev V. A.¹^ORCID,Zinovieva A. F.¹²^ORCID,Smagina Zh. V.¹^ORCID,Dvurechenskii A. V.¹²^ORCID,Vdovin V. I.¹^ORCID,Gutakovskii A. K.¹^ORCID,Fedina L. I.¹^ORCID,Borodavchenko O. M.³^ORCID,Zhivulko V. D.³,Mudryi A. V.³^ORCID

Affiliation:

1. Rzhanov Institute of Semiconductor Physics, SB RAS, 630090 Novosibirsk, Russia

2. Department of Physics, Novosibirsk State University, 630090 Novosibirsk, Russia

3. Scientific-Practical Material Research Centre of the National Academy of Science of Belarus, P. Brovki 19, 220072 Minsk, Belarus

Funder

Russian Science Foundation

Belarusian Republican Foundation for Fundamental Research

Russian Foundation for Basic Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0063592

Reference45 articles.

1. Ge-on-Si laser operating at room temperature

2. An electrically pumped germanium laser

3. Low-threshold optically pumped lasing in highly strained germanium nanowires

4. Electrically pumped lasing from Ge Fabry-Perot resonators on Si

5. Lasing in direct-bandgap GeSn alloy grown on Si

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Light emission from ion-implanted SiGe quantum dots grown on Si substrates;Materials Science in Semiconductor Processing;2024-10

2. Thermally stable photoluminescence centers at 1240 nm in silicon obtained by irradiation of the SiO2/Si system;Journal of Applied Physics;2024-06-04

3. Silicon Light-Emitting Diodes with Dislocation-Related Luminescence Fabricated with Participation of Oxygen Precipitates;Semiconductors;2023-07

4. Phenomenological model of superconducting optoelectronic loop neurons;Physical Review Research;2023-03-09

5. On-chip infrared photonics with Si-Ge-heterostructures: What is next?;APL Photonics;2022-05-01