Silicon Carbide Schottky Rectifiers with Improved Avalanche Ruggedness-Reference-Cited by-同舟云学术

Silicon Carbide Schottky Rectifiers with Improved Avalanche Ruggedness

Published:2016-05 Issue: Volume:858 Page:777-781
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Konstantinov Andrei¹,Jinman Song¹,Young Sungmo¹,Lee Brian¹,Allerstam Fredrik¹,Neyer Thomas¹,Akram Sal¹

Affiliation:

1. Fairchild Semiconductor

Abstract

Silicon carbide Schottky-barrier diode (SBD) rectifiers have been manufactured with low on-state voltages, high surge currents and high avalanche ruggedness. Non-destructive unclamped inductive switching currents of 188 A (mean) are achieved for the 1200 V 15 A rectifier. Very tight distribution of maximum sustained UIS current is confirmed. We relate improved avalanche ruggedness to bulk avalanche breakdown and show the breakdown pattern of the new Schottky rectifier being the same type as that for the p-n diode.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.858.777.pdf

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1. Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+–n0–n+ Diodes;Semiconductors;2018-11-07

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3. 4H-SiC 1200 V Junction Barrier Schottky Diodes with High Avalanche Ruggedness;Materials Science Forum;2018-06

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