Author:
Konstantinov A.,Pham H.,Lee B.,Park K.S.,Kang B.,Allerstam F.,Neyer T.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Current status and emerging trends in wide bandgap semiconductor power switching devices;Shenai;ECS J Solid State Sci Technol,2013
2. Konstantinov A, Jinman S, Young S, Allerstam F, Neyer T. Silicon carbide Schottky-barrier diode rectifiers with high avalanche robustness. In: PCIM Europe-2015 Proceedings of Nuremberg; 2015. p. 586–9. .
3. Silicon carbide Schottky rectifiers with improved avalanche ruggedness;Konstantinov;Mater Sci Forum,2016
4. Rupp R, Gerlach R, Kabakow A, Schörner R, Hecht C, Elpelt R. Avalanche behaviour and its temperature dependence of commercial SiC MPS diodes: influence of design and voltage class. In: power semiconductor devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on 2014. p. 67–70. https://doi.org/10.1109/ISPSD.2014.6855977.
5. Impact ionization and superlattice in 6H SiC;Dmitriev;Sov Phys Semicond,1983
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献