Analysis of Breakdown-Voltage Increase on SiC Junction Barrier Schottky Diode Under Negative Bias Stress-Reference-Cited by-同舟云学术

Analysis of Breakdown-Voltage Increase on SiC Junction Barrier Schottky Diode Under Negative Bias Stress

Published:2023-01 Issue:1 Volume:70 Page:191-195
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jin Fu-Yuan¹,Chen Po-Hsun²^ORCID,Hung Wei-Chun¹^ORCID,Hung Wei-Chieh¹,Chang Chin-Han³,Ciou Fong-Min¹,Lin Yu-Shan¹,Chang Kai-Chun¹,Lin Yun-Hsuan¹,Kuo Ting-Tzu³,Chen Kuan-Hsu¹,Yeh Chien-Hung⁴,Chang Ting-Chang⁵^ORCID

Affiliation:

1. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

2. Department of Applied Science, Republic of China Naval Academy, Kaohsiung, Taiwan

3. Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan

4. Department of Photonics, National Sun Yat-sen University, Kaohsiung, Taiwan

5. Department of Physics and the Center of Crystal Research, National Sun Yat-sen University, Kaohsiung, Taiwan

Funder

National Science and Technology Council, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10004030/09964097.pdf?arnumber=9964097

Reference38 articles.

1. Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

2. Ruggedness analysis of 600V 4H-SiC JBS diodes under repetitive avalanche conditions

3. Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

4. Reverse-Bias Stress-Induced Electrical Parameters Instability in 4H-SiC JBS Diodes Terminated Nonequidistance FLRs

5. Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

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