Abstract
A state-of-the art family of 1200 V junction barrier Schottky (JBS) diodes was developed. These devices are highly competitive in switching applications thanks to low specific series resistance (1.8 mΩ.cm2 at current rating) and low capacitive charge (1420 nC.cm-2 at 800 V). A uniform avalanche distribution over the active area combined with an optimized high-voltage termination provides industry-leading UIS capabilities. Stringent reliability tests were performed to meet the qualification requirements for the industrial market.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference6 articles.
1. K. Hamada, M. Nagao, M. Ajioka, F. Kawai, SiC—Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles,, IEEE Transactions on Electron Devices 62 (2015) 278-285.
2. T. Nakamura, Y. Nakano, M. Aketa, R. Nakamura, S. Mitani, H. Sakaiti, Y. Yokotsuji, High Performance SiC Trench Devices with Ultra-low Ron,, IEDM Proceedings (2011) 599-601.
3. K. Chatty, S. Banerjee, K. Matocha, 650V and 900V, 150A SiC Schottky Diode for Automotive Applications,, WiPDA Proceedings (2016) 143-146.
4. C. Winterhalter, H.-R. Chang, R.N. Gupta, Optimized 1200V Silicon Trench IGBTs with Silicon Carbide Schottky Diodes,, Industry Application Conference Proceedings (2000) 2928-2933.
5. T. Basler, R. Rupp, R. Gerlach, B. Zippelius, M. Draghici, Avalanche Robustness of SiC MPS,, PCIM Europe Proceedings (2016) 180-187.
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献