SiC Charge-Balanced Devices Offering Breakthrough Performance Surpassing the 1-D Ron versus BV Limit-Reference-Cited by-同舟云学术

SiC Charge-Balanced Devices Offering Breakthrough Performance Surpassing the 1-D Ron versus BV Limit

Published:2019-07 Issue: Volume:963 Page:655-659
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Bolotnikov Alexander¹,Losee Peter A.²,Ghandi Reza²,Kennerly Stacey²,Datta Rajib²,She Xu²

Affiliation:

1. General Electric Global Research Center

2. General Electric Global Research Center, USA

Abstract

This work presents experimental validation of novel device design, based on charge-balance concept expected to expand SiC utilization space for industrial and transportation power conversion applications. Fabricated 2kV and 3kV SiC CB-JBS diodes have surpassed the 1-D BV versus ROn,sp tradeoff with the highest reported breakdown voltage. Static and dynamic characteristics of these new diodes are reported.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.963.655.pdf

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