Affiliation:
1. General Electric Global Research Center
2. GE GRC
Abstract
In this paper, we show state of the art, low on-resistance, 25mW/1.2kV and 43mW/2.5kV SiC MOSFETs with excellent design robustness and process control such that the parametric spread of key device characteristics are approaching Si products. The impact of starting material variability on device performance is shown and design sensitivity curves are presented.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
2 articles.
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