Affiliation:
1. State University of New York
2. North Carolina State University
Abstract
This paper presents the design and fabrication of 1200V-rated SiC JBS diodes in a manufacturing environment. Various designs of p+-grids and edge termination structures were proposed and fabricated on 6-inch SiC substrates. Experimental results show that deeper p+ n junctions are necessary to reduce the leakage current in blocking mode of operation. It was also demonstrated that the hybrid-JTE edge termination structure is very efficient to provide a near-ideal breakdown voltage. Ti and Ni Schottky metals were compared with respect to forward voltage drops and reverse blocking behaviors at high temperatures up to 200 °C.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference5 articles.
1. Peter Friedrichs, SiC Power Devices – Lessons Learned and Prospects After 10 Years of Commercial Availability,, in Proc. CS Mantech Conf., Palm Springs, California, USA, May 16-19, (2011).
2. Woongje Sung and B. J. Baliga, A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension,, IEEE Electron Device Lett., vol. 37, no. 12, pp.1609-1612, Dec. 2016.
3. B. J. Baliga, Silicon Carbide Power Devices. World Scientific Publishing Co. Ltd., 2005, Chap. 6, Section 6.1, p.104–119.
4. Woongje Sung, Edward Van Brunt, B. J. Baliga, and Alex. Q. Huang, A New Edge Termination Technique for High-Voltage Devices in 4H-SiC – Multiple-Floating-Zone Junction Termination Extension,, IEEE Electron Device Lett., vol. 32, no. 7, p.880–882, July. 2011..
5. Woongje Sung and B. J. Baliga, Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme,, IEEE Electron Device Lett., vol. 37, no. 12, pp.1605-1608, December 2016.
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献